RoHS
MMBT4403LT1
TRANSISTOR (NPN)
Features
Power dissipation
。
P
C M
: 0.225 W (Tamb=25 C)
Pluse Drain
I
CM
: -0.6 mA
Reverse Voltage
V
(BR)CBO
: -40V
Operating and storage junction temperature range
。
。
T
j
, T
stg
: -55 C to +150 C
SOT-23
1
1.
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Collector-Emitter Saturation Voltage
Base-emitter saturatio voltage
Transition Frequency
Device Marking
W
MMBT4401LT1 = 2X
J
E
E
C
E
L
R
T
H
FE(1)
H
FE(2)
V
CE(sat)
V
BE(sat)
f
T
O
Test Condition
I
C
=-100 A, I
E
=0
I
C
=-1 mA, I
B
=0
I
E
=-100 A, I
C
=0
V
CB
=-35V, I
E
=0
V
CB
=-35V, I
B
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-150mA
V
CE
=-2V, I
C
=-500mA
I
C
=-150mA, I
B
=-15mA
I
C
=-150mA, I
B
=-15mA
V
CE
=-10V, I
C
=-20mA ,f=100MHz
N
C
I
2.9
1.9
C
2.4
1.3
O
0.4
L
,
.
2
3
D
T
1.BASE
2.EMITTER
3.COLLECTOR
0.95
0.95
Unit:mm
(Ta=25 C)
。
Min. Typ. Max. Unit
-40
-40
-5
-0.1
-0.1
-0.1
100
20
-0.4
-0.95
200
V
V
Mhz
300
V
V
V
A
A
A
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Http:// www.wej.cn
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