RoHS
MMBT2907
A
MMBT2907A
TRANSISTOR (PNP)
FEATURES
Epitaxial planar die construction
Complementary NPN Type available(MMBT2222A)
MARKING:2F
MAXIMUM RATINGS(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-60
-60
-5
-0.6
0.225
150
-55 to +150
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
Test
conditions
MIN
-60
-60
-5
-20
-50
-10
75
100
100
100
50
-0.4
-1.6
-1.3
-2.6
200
10
25
225
V
CC
=-6V,I
C
=-150mA,I
B1
=-I
B2
=-15mA
60
V
V
V
V
MHz
nS
nS
nS
nS
300
TYP
MAX
UNIT
V
V
V
nA
nA
nA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Ｗ
Ｊ
Ｅ
Ｅ
Ｅ
Ｌ
Ｔ
Ｃ
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CE0
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)
V
CE(sat)
V
BE(sat)
V
BE(sat)
f
T
t
d
t
r
t
S
t
f
V
(BR)CBO
Ｏ
Ｒ
Ｉ
Ｎ
Ｃ
Ｃ
Units
V
V
V
A
W
℃
℃
，
．
Ｏ
Ｄ
Ｔ
Ｌ
I
C
=-10μA,I
E
=0
I
C
=-10mA,I
B
=0
I
E
=-10μA,I
C
=0
V
CB
=-50V,I
E
=0
V
CE
=-30V,V
EB(0ff)
=-0.5V
V
EB
=-3V,I
C
=0
V
CE
=-10V,I
C
=-0.1mA
V
CE
=-10V,I
C
=-1mA
V
CE
=-10V,I
C
=-10mA
V
CE
=-10V,I
C
=-150mA
V
CE
=-10V,I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-20V,I
C
=-50mA,f=100MHz
V
CC
=-30V,I
C
=-150mA I
B1
=- 15mA
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
