RoHS
MMBT2907AT
MMBT2907AT
FEATURES
Power dissipation
P
CM:
TRANSISTOR (PNP)
SOT-523
1.
BASE
2.
EMITTER
0.15
W (Tamb=25℃)
3.
COLLECTOR
Collector current
I
CM:
-0.6
A
Collector-base voltage
V
(BR)CBO
:
-60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Test
conditions
Ic=-
10
µA, I
E
=0
I
EBO
h
FE(1)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on Time
W
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
J
E
E
C
E
L
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
R
T
V
CE
=-
10
V, I
C
=-
100
µA
V
CE
=-
10
V, I
C
=-
1
mA
O
Ic=-
10m
A, I
B
=0
I
E
=-
10
µA, I
C
=0
V
CB
=-
50
V, I
E
=0
V
EB
=-
4
V, I
C
=0
75
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
UNIT
V
V
V
-60
-60
-5
-10
-10
100
100
100
50
-0.4
-1.6
-1.3
-2.6
140
5
45
nA
nA
V
CE
=-
10
V, I
C
=-
10
mA
V
CE
=-
10
V, I
C
=-
150
mA
V
CE
=-
10
V, I
C
=-
500
mA
I
C
=-1
50
mA, I
B
=-1
5
mA
300
V
V
V
V
MHz
pF
ns
ns
ns
ns
ns
ns
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(sat)(1)
I
C
=-
500
mA, I
B
=-
50
mA
I
C
=-1
50
mA, I
B
=-1
5
mA
I
C
=-
500
mA, I
B
=-
50
mA
V
CE
=-
12
V, I
C
=-
2
mA, f=30MHz
V
CB
=-
12
V, I
E
=0, f=
1
MHz
V
BE(sat)(2)
f
T
C
ob
ton
td
tr
toff
ts
tf
Vcc=-30V, Ic=-150mA, I
B1
=-15mA
10
40
100
Vcc=-6V,Ic=-150mA,I
B1
= I
B2
=-15mA
80
30
Marking
2F
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
