RoHS
MMBD4448W
MMBD4448W
FEATURES
SWITCHING DIODE
SOT-323
1. 25¡ À0. 05
P
D
:
200
mW (Tamb=25℃)
Collector current
I
O:
250
mA
Collector-base voltage
V
R
:
75
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Symbol
V
(BR) R
I
R
Reverse breakdown voltage
Reverse voltage
Forward
W
Diode
J
E
E
leakage current
C
E
L
R
T
V
F
O
Test
N
C
I
C
1. 30¡ À0. 03
O
2. 30¡ À0. 05
Unit: mm
Marking: KA3
unless otherwise specified)
conditions
I
R
= 10
µ
A
V
R
=20V
V
R
=75V
I
F
=5mA
I
F
=10mA
I
F
=100mA
I
F
=150mA
V
R
=0V, f=1MHz
I
F
=I
R
=10mA
MIN
75
0.025
2.5
0.72
0.855
1
1.25
4
4
V
MAX
UNIT
V
0. 30
voltage
capacitance
C
D
t
rr
Reverse recovery time
I
rr
=0.1×I
R
,R
L
=100Ω
Test period <3000µs.
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
2. 00¡ À0. 05
EF
1. 01 R
Power dissipation
L
,
.
D
T
µ
A
pF
nS
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
