SWITCHING DIODE
Features
Power dissipation
。
P
D
: 225 mW (Tamb=25 C)
Pluse Drain
I
F
: 150 mA
Reverse Voltage
V
R
: 75V
Operating and storage junction temperature range
。
。
T
j
, T
stg
: -55 C to +150 C
MMBD4148
SOT-23
3
1
2
1.
2.4
1.3
1.BASE
2.EMITTER
3.COLLECTOR
2.9
1.9
0.95
ANODE-CATHODE
3
0.95
0.4
Unit:mm
ANODE
1
Marking:5D
CATHODE
2
Electro-Optical Characteristics
Parameter
Reverse breakdown voltage
Reverse Voltage leakage current
(Ta=25 C)
。
Symbol
V
(BR)
I
R
Test Condition
I
R
=100 A
V
R
=75V
I
F
=1mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
V
R
=0V f=1MHz
I
F
=I
R
=10mA
V
R
=5V
R
C
=100
MIN.
75
MAX.
Unit
V
2.5
715
855
1000
1250
20
4
A
Forward Voltage
V
F
C
D
t
rr
mV
Diode Capacitance
Reverse Recovery Time
pF
nS
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com