RoHS
MJD112
TO-251/TO-252-2 Plastic-Encapsulate Transistors
TO-251
TO-252-2
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
MJD112
TRANSISTOR (NPN)
1. BASE
FEATURES
Complementary darlington power transistors
dpak for surface mount applications
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θ
JC
R
θ
JA
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal resistance, junction to case
Thermal resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
100
100
5
2
1
6.25
71.4
150
-55-150
Units
V
V
V
A
W
℃/W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
V
CE(sat)1
Collector-emitter saturation voltage
V
CE(sat)2
Base-emitter voltage
Transition frequency
Collector output capacitance
V
BE
f
T
C
ob
I
C
=4A,I
B
=40mA
V
CE
=3V,I
C
=2A
V
CE
=10V,I
C
=0.75A,f=1MHz
V
CB
=10V,I
E
=0,f=0.1MHz
25
100
3
2.8
V
V
MHz
pF
Test
conditions
MIN
100
100
5
20
20
2
500
1000
200
2
V
12000
TYP
MAX
UNIT
V
V
V
µA
µA
mA
I
C
=1mA,I
E
=0
I
C
=30mA,I
B
=0
I
E
=5mA,I
C
=0
V
CB
=100V,I
E
=0
V
CE
=50V,I
E
=0
V
EB
=5V,I
C
=0
V
CE
=3V,I
C
=500mA
V
CE
=3V,I
C
=2A
V
CE
=3V,I
C
=4A
I
C
=2A,I
B
=8mA
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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