RoHS
LL60/LL60P
Schottky Barrier Diode
Features
1. High reliability
2. Low reverse current and low forward voltage
Applications
Low current rectification and high speed switching
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Repetitive peak reverse voltage
Peak forward surge current
Test Conditions
Forward continuous current
Storage temperature range
Maximum Thermal Resistance
T
j
=25℃
Parameter
Test Conditions
on PC board 50mm×50mm×1.6mm
Symbol
R
thJA
Value
250
Unit
K/W
W
Junction ambient
J
E
E
C
E
L
t
p
1 s
R
T
O
LL60
LL60P
LL60
LL60P
LL60
LL60P
N
C
I
Symbol
V
RRM
V
RRM
I
FSM
I
FSM
I
F
I
F
T
stg
C
O
L
,
.
D
T
Type
Value
40
45
150
500
30
50
-65~+125
Unit
V
V
mA
mA
mA
mA
℃
T
a
=25℃
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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