RoHS
KTC3227
KTC3227
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92L
1. EMITTER
2. COLLECTOR
1
W (Tamb=25℃)
3. BASE
Collector current
I
CM
:
400
mA
Collector-base voltage
V
(BR)CBO
:
80
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
Test
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
W
Collector Output Capacitance
J
E
E
C
E
L
R
T
V
BE
O
unless otherwise specified)
conditions
MIN
80
80
5
0.1
0.1
70
40
0.4
0.55
80
10
0.8
V
V
MHz
pF
240
TYP
MAX
UNIT
V
V
V
µA
µA
Ic= 1mA, I
E
=0
N
C
I
C
123
O
L
,
.
D
T
I
C
= 5 mA , I
B
=0
I
E
= 1 mA, I
C
=0
V
CB
=50V, I
E
=0
V
EB
=5V, I
C
=0
I
EBO
h
FE(1)
h
FE(2)
V
CE
= 2V, I
C
= 50mA
V
CE
= 2V, I
C
= 200mA
I
C
= 200mA, I
B
= 20mA
V
CE
= 2V, I
C
= 5mA
V
CE
= 10V, I
C
= 10mA
V
CB
=10V, I
E
=0, f=1MH
Z
V
CE
(sat)
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
O
70-140
Y
120-240
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