RoHS
KTC3200
KTC3200
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92
1. EMITTER
2. COLLECTOR
0.625
W (Tamb=25℃)
3. BASE
Collector current
I
CM
:
0.1
A
Collector-base voltage
V
(BR)CBO
:
120
V
Operating and storage junction temperature range
T
stg
:
TJ:
-55℃ to +150℃
150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
Collector-emitter saturation voltage
Base-emitter voltage
W
Transition frequency
CLASSIFICATION OF h
FE
Rank
Range
GR
200-400
BL
350-700
J
E
E
C
E
L
R
T
Test
Ic= 100µA, I
E
=0
I
C
= 1mA, I
B
=0
O
unless otherwise specified)
conditions
MIN
120
120
5
0.1
0.1
200
700
0.3
0.65
0.8
V
V
TYP
MAX
UNIT
V
V
V
µA
µA
N
C
I
C
O
1 2 3
L
,
.
D
T
I
E
= 100µA, I
C
=0
V
CB
= 120V, I
E
=0
V
EB
= 5V, I
C
=0
I
EBO
h
FE
V
CE
=6V, I
C
= 2mA
I
C
= 10mA, I
B
= 1 mA
V
CE
= 6V, I
C
= 2mA
V
CE
= 6 V, I
C
= 1mA
V
CE(sat)
V
BE
f
T
F=30MHz
100
MHz
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
