RoHS
KTC3199
KTC3199
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
400
mW (Tamb=25℃)
Collector current
I
CM:
150
mA
Collector-base voltage
V
(BR)CBO
:
50
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
W
h
FE
Linearity
J
E
E
C
E
L
O
70-140
I
EBO
R
T
O
Test
conditions
Ic=
100
µA, I
E
=0
Ic=
1
mA, I
B
=0
N
C
I
C
MIN
O
TYP
123
L
,
.
MAX
D
T
UNIT
V
V
V
50
50
5
0.1
0.1
70
0.1
80
2.0
3.5
I
E
=
100
µA, I
C
=0
V
CB
=
50
V, I
E
=0
V
EB
=
5
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
6
V, I
C
=
2
mA
I
C
=
100
mA, I
B
=
10
mA
V
CE
=
10
V, I
C
=
1
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
CE
=
6
V, I
c
=
0.1
mA,
f=
1K
HZ, Rg=
10
KΩ
h
FE
(0.1mA)/h
FE
(2mA)
700
0.25
V
MHz
pF
V
CE(sat)
f
T
C
ob
NF
1.0
0.95
10
dB
CLASSIFICATION OF h
FE(1)
Rank
Range
Y
120-240
GR
200-400
BL
300-700
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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