RoHS
KTB1366
TO-220F
KTB1366
FEATURES
Power dissipation
P
CM:
TRANSISTOR (PNP)
1. BASE
2. COLLECTOR
3. EMITTER
2
W (Tamb=25℃)
123
Collector current
I
CM:
-3
A
Collector-base voltage
V
(BR)CBO
:
-60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
W
Fall time
Storage time
J
E
E
C
E
L
t
f
I
EBO
R
T
O
Test
conditions
Ic=
-1
mA, I
E
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
UNIT
V
V
V
-60
-60
-7
-100
-100
60
20
-1
-1
9
150
0.5
Ic=
-50
mA, I
B
=0
I
E
=
-1m
A, I
C
=0
V
CB
=
-60
V, I
E
=0
V
EB
=
-7
V, I
C
=0
V
CE
=
-5
V, I
C
=
-0.5
A
V
CE
=
-5
V, I
C
=
-3
A
I
C
=
-2
A, I
B
=
-0.2
A
V
CE
=
-5
V, I
C
=
-0.5
A
V
CE
=
-5
V, I
C
=
-0.5
A
µA
µA
h
FE(1)
200
h
FE(2)
V
CE(sat)
V
BE
V
V
MHz
pF
µs
µs
f
T
C
ob
V
CB
=
-10
V, I
E
=0, f=
1
MHz
I
C
=-2A, I
B1
=-I
B2
=-0.2A
V
CC
=-30V
t
s
1.7
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
O
60-120
Y
100-200
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Http:// www.wej.cn
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