RoHS
C945
C945
FEATURES
TRANSISTOR (NPN)
TO-92
Power dissipation
P
CM
:
Collector current
I
CM
:
V
(BR) CBO
:
Collector-base voltage
60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
breakdown
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
V
CE
(sat)
V
BE
(sat)
V
CE
=6V, I
C
=0.1mA
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=10mA,
f =30
MHz
V
CB
=10V, I
E
=0, f=1MH
Z
V
CE
=
6V, I
C
=0.1
mA
R
g
=10
kΩ
, f=1k
MH
Z
4
200
3.0
10
40
0.3
1
V
V
MHz
pF
dB
0.4
0.15
W (Tamb=25℃)
A
1. EMITTER
2. COLLECTOR
3. BASE
1 2 3
unless otherwise specified)
Test
conditions
MIN
60
50
5
0.1
0.1
0.1
70
700
TYP
MAX
UNIT
V
V
V
µA
µA
µA
Ic=1mA, I
E
=0
I
C
=100uA , I
B
=0
I
E
=100µA, I
C
=0
V
CB
=60V, I
E
=0
V
CE
=45V
V
EB
=5V, I
C
=0
V
CE
=6V, I
C
=1mA
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
f
T
C
ob
NF
CLASSIFICATION OF h
FE(1)
Rank
Range
O
70-140
Y
120-240
GP
200-400
BL
350-700
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