RoHS
C2611
C 2611
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
TO-251
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
0.2
A
I
CM:
Collector-base voltage
600
V
V
(BR)CBO
:
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
unless otherwise specified)
Test
conditions
Ic= 100µA, I
E
=0
I
C
= 1mA , I
B
=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
W
Transition frequency
Fall time
J
E
E
C
E
L
I
EBO
R
T
I
E
= 100µA, I
C
=0
O
N
C
I
7
10
5
C
1
2
O
3
L
,
.
V
V
V
D
T
MIN
600
400
TYP
MAX
UNIT
V
CB
= 600V, I
E
=0
V
CE
= 400V, I
B
=0
V
EB
= 7V, I
C
=0
100
200
100
40
µA
µA
µA
h
FE(1)
h
FE(2)
V
CE
= 20V, I
C
= 20mA
V
CE
= 10V, I
C
= 0.25 mA
I
C
= 50mA, I
B
= 10 mA
I
C
= 50 mA, I
B
= 10mA
V
CE
= 20 V, I
C
=20mA
V
CE
(sat)
V
BE
(sat)
0.5
1.2
V
V
f
T
f =
1MHz
I
C
=50mA,
I
B1
=-I
B2
=5mA,
V
CC
=45V
8
MHz
t
f
t
S
0.3
1.5
µs
µs
Storage time
CLASSIFICATION OF h
FE(1)
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
