RoHS
BZT52C2V4S-39S
BZT52C2V4S-BZT52C39S ZENER DIODE
FEATURES:
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Planar die construction
200mW power dissipation on ceramic PBC
General purpose, Medium current
Ideally suited for automated assembly processes
Available in Lead free version
Maximum Ratings @Ta=25℃ unless otherwise specified
Characteristic
Symbol
VF
Value
0.9
Unit
V
Forward Voltage (Note 2) @ IF = 10mA
Power Dissipation(Note 1)
PD
200
mW
℃/W
℃
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
RθJA
625
Tj,TSTG
-65 to +150
Notes:1. Device mounted on ceramic PCB; 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
WEJ ELECTRONIC CO.,LTD
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WEJ ELECTRONIC CO.,LTD