RoHS
BCX20LT1
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Device Dissipation
FR-5 Board(1) Ta=25
Derate above 25
Total Device Dissipation
Alumina Substrate,(2) Ta=25
Derate above 25
Junction Temperature
Storage Temperature
Tj
Tstg
2.4
150
-55-150
P
D
1.8
300
mW/
mw
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Rating
30
25
5.0
500
225
Unit
V
V
V
2.9
1.9
1.
2.4
1.3
mA
mw
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter Cutoff Current
Collector Cutoff Current
DC Current Gain
W
J
E
*
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
1.Total Device Dissipation : FR=1
X
0.75
X
0.062in .
2.Alumina=0.4
X
0.3
X
0.024in.99.5% alumina
E
C
E
L
R
T
Symbol
V(BR)ceo
V(BR)ces
Iebo
Icbo
H
FE
Vce(sat)
Vbe(on)
O
Min
25
30
100
70
40
Typ
N
mW/
C
I
Unit
V
V
10
uA
nA
uA
C
O
0.4
1.GATE
2.SO URCER
3.DRAIE
L
,
.
U nit:m m
D
T
Max
0.95
0.95
Test Conditions
Ic=10mA
Ib=0
Ic=10uA Ic=0
Veb=5V Ic=0
Vcb=20V Ie=0
Vcb=20V Ie=0 T
A
=150
Vce=1.0V Ic=-100mA
Vce=1.0V Ic=-300mA
Vce=1.0V Ic=-500mA
100
5.0
600
620
1.2
mV
V
Ic=-500mA Ib=-50mA
Vbe=1V Ic=500mA
DEVICE MARKING:
BCX20LT1=U2
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
