RoHS
BCW68G
PNP EPITAXIAL SILICON TRANSISTOR
SURFACE MOUNT SMALL
SIGNAL TRANSISTORS
ABSOLUTE MAXIMUM RATINGS at Ta=25
1.
Characteristic
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vceo
Vcbo
Ic
P
D
Tj
Tstg
Rating
-45
-60
-800
225
150
-65-150
Unit
V
V
2.9
1.9
0.95 0.95
2.4
1.3
mW
0.4
mA
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
DC Current Gain
Collector-Emitter Saturation Voltage
Gain Bandwidth Product
Symbol
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test: Pulse Width
300uS,Duty cycle 2%
W
J
E
E
C
E
L
R
T
Hfe
Vce(sat)
f
T
O
Min
120
100
N
Max
400
-1.5
C
I
Unit
V
MHz
C
O
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
U nit:m m
Test Conditions
Vce= -1.0V Ic= -10mA
Ic= -300mA Ib= -30mA
Vce= -5V Ic=-10mA
f=50MHz
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