RoHS
BCW61B
SOT-23 Plastic-Encapsulate Transistors
BCW61B
FEATURES
TRANSISTOR (PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
P
CM:
0.25
W (Tamb=25℃)
2. 9
1. 9
2. 4
1. 3
Collector current
I
CM:
-0.2
A
Collector-base voltage
V
(BR)CBO:
-32
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃
to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
unless otherwise specified)
Test
conditions
MIN
-32
-32
-5
-0.02
-0.02
180
310
-0.55
-1.05
100
V
V
MHz
TYP
MAX
UNIT
V
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
Marking
J
E
E
C
E
L
R
T
f
T
O
N
C
I
C
O
0. 4
0. 95
0. 95
L
,
.
D
T
1. 0
Unit: mm
Ic= -10
µ
A, I
E
=0
Ic= -1mA, I
B
=0
I
E
=-10
µ
A, I
C
=0
V
CB
=-32V, I
E
=0
V
EB
=-4V, I
C
=0
µ
A
µ
A
V
CE
=-5V, I
C
= -2mA
I
C
=-50mA, I
B
=-1.25mA
I
C
=-50mA, I
B
=-1.25mA
V
CE
= -5V, I
C
=-10mA
V
CE
(sat)
V
BE
(sat)
f=
100MHz
BB
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