RoHS
BCW60C
SOT-23 Plastic-Encapsulate Transistors
BCW60C
FEATURES
Power dissipation
P
CM:
0.25
W (Tamb=25℃)
0. 95
TRANSISTOR (NPN)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Collector current
I
CM
:
0.1 A
Collector-base voltage
V
(BR)CBO
:
32 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
unless otherwise specified)
Test
conditions
MIN
32
32
5
0.02
0.02
40
250
100
0.35
0.55
0.85
1.05
0.55
100
5
0.75
V
V
V
V
V
MHz
pF
460
MAX
UNIT
V
V
V
DC current gain
Collector-emitter saturation voltage
W
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Output capacitance
J
E
E
C
E
L
V
(BR)EBO
I
CBO
I
EBO
R
T
O
N
C
I
C
2. 4
1. 3
0. 95
Unit: mm
Ic= 10
µ
A, I
E
=0
Ic= 1mA, I
B
=0
I
E
=10
µ
A, I
C
=0
V
CB
=32V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=5V, I
C
= 10
µ
A
V
CE
=5V, I
C
= 2mA
V
CE
=5V, I
C
= 50mA
I
C
=10mA, I
B
=0.25mA
I
C
=50mA, I
B
=1.25mA
I
C
=10mA, I
B
=0.25mA
0. 4
O
L
,
.
D
T
2. 9
1. 9
1. 0
µ
A
µ
A
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(sat)
I
C
=50mA, I
B
=1.25mA
V
BE
V
CE
=5V, I
C
= 2mA
V
CE
= 5V, I
C
=10mA,
f=
100MHz
V
CB
= 10V, I
E
=0,
f=
1MHz
f
T
C
ob
AC
Marking
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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