RoHS
BC856-BC858
PNP SILICON TRANSISTOR
Features
Power dissipation
。
P
C M
: 0.3 W (Tamb=25 C)
Pluse Drain
I
CM
: -0.1 mA
Reverse Voltage
V
(BR)CBO
: BC856 -80V
BC857 -50V
BC858 -30V
Operating and storage junction temperature range
。
。
T
j
, T
stg
: -55 C to +150 C
2.9
1.9
SOT-23
3
1
1.
Electrical Characteristics
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
BC856
BC857
B C 858
BC856
BC857
B C 858
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
W
Base-emitter saturatio voltage
Transition Frequency
J
E
E
C
E
L
R
T
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
f
T
Symbol Test Condition
V
(BR)CBO
I
C
=-10 A, I
E
=0
V
(BR)CEO
I
C
=-10 mA, I
B
=0
V
(BR)EBO
I
E
=-1 A, I
C
=0
V
CB
=-70V, I
E
=0
I
CBO
V
CB
=-45V, I
E
=0
V
CB
=-25V, I
E
=0
V
CB
=-60V, I
E
=0
I
CEO
V
CB
=-40V, I
E
=0
V
CB
=-25V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-2mA
I
C
=-100mA, I
B
=-5mA
I
C
=-100mA, I
B
=-5mA
V
CE
=-5V, I
C
=-10mA ,f=100MHz
O
N
C
I
C
2.4
1.3
0.95
0.4
O
L
,
.
2
D
T
1.BASE
2.EMITTER
3.COLLECTOR
0.95
Unit:mm
(Ta=25 C)
。
Min. Typ. Max. Unit
-80
-50
-30
-65
-45
-30
-5
-0.1
V
V
V
A
BC856
BC857
B C 858
BC856
BC857
B C 858
-0.1
-0.1
125
220
420
250
475
800
-0.5
-1
100
A
A
BC856
BC857
B C 858
V
V
MHz
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