RoHS
BC847S
Multi-Chip TRANSISTOR
FEATURES
Power dissipation
P
CM
:
300
(NPN)
SOT-363
mW (Tamb=25℃)
Collector current
I
CM
: 200
mA
Collector-base voltage
V
V
(BR)CBO
: 50
Operating and storage junction temperature range
T
J,
T
stg
: -55℃to +150℃
MARKING: 1C
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test
unless
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
W
J
E
E
C
E
L
h
FE(1)
R
T
Ic=
10µ
A,I
E
=0
Ic=
10
mA,I
B
=0
I
E
=
10µ
A,I
C
=0
O
conditions
N
otherwise
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
specified)
UNIT
V
V
V
50
45
6
15
110
630
0.25
0.65
0.58
V
CB
=
30
V,I
E
=0
nA
V
CE
=
5
V,I
C
=
2
mA
I
C
=
10
mA,I
B
=
0.5
mA
I
C
=
100
mA,I
B
=5mA
V
CE
=
5
V,I
C
=
2
mA
V
CE
=
5
V,I
C
=
10
mA
V
CE
=
5
V,I
C
=
20
mA ,f=
100
MHz
V
CB
=
10
V,I
E
=0,f=
1
MHz
V
CE(sat)(1)
V
CE(sat)(2)
V
BE(1)
V
V
V
V
MHz
pF
0.7
0.77
200
2
V
BE(2)
f
T
C
ob
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Http:// www.wej.cn
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