RoHS
BAS116LT1
SURFACE MOUNT SWITCHING DIODE
• Low Leakage Current Applications
• Medium Speed Switching Times
Package:
SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Non-Repetitive
Voltage
Peak Repetitive Reverse Voltage
working Peak Reverse Voltage
DC Blocking Voltage
Peak Forward Current
Symbol
Reverse
V
RM
Rating
100
Unit
V
Peak
V
RRM
V
RWM
V
R
I
F
200
300
mAdc
mAdc
75
V
Forward
Current(Note)
Power
Dissipation
Continuous
I
FM
(Note)
P
D
300
2.4
Derate Above 25
Junction Temperature
Storage Temperature
Note:Diode Ceramic Substrate 10mm
Tj
Tstg
8.0mm
150
-50-150
0.7mm
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Symbol
Forward Voltage
Reverse Breakdown Voltage
Reverse Voltage Leakage Current
W
J
E
Capacitance
Reverse Recovery Time
E
C
E
L
R
T
V
F
V
(BR)
O
Min
75
N
mW/
Max
0.9
1.0
1.1
1.25
—
mW
C
I
Unit
V
V
V
V
Vdc
uA
nA
PF
uS
C
O
L
,
.
D
T
Test Conditions
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
I
BR
= 100 uAdc
V
R
=75V
V
R
=75V Tj=150
V
R
=0 f=1.0MHz
I
F
=10mA to I
R
=10mA
I
R
Cj
Trr
8.0mm
0.7mm
5.0
80
2.0
3.0
Note:Diode On Ceramic Substrate 10mm
DEVICE MARKING:
BAS116LT1=JV
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
