RoHS
2SD874A
2SD874A
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
SOT-89
1.
BASE
2.
COLLECTOR
1
500
mW (Tamb=25℃)
3.
EMITTER
Collector current
I
CM:
1
A
Collector-base voltage
V
(BR)CBO
:
60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
Q
85-170
YQ
R
120-240
YR
S
170-340
YS
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
10
µA, I
E
=0
Ic=
2
mA, I
B
=0
N
C
I
C
MIN
O
3
TYP
2
L
,
.
MAX
D
T
UNIT
V
V
V
60
50
5
0.1
0.1
85
50
0.4
1.2
200
20
340
I
E
=
10
µA, I
C
=0
V
CB
=
20
V, I
E
=0
V
EB
=
4
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
10
V, I
C
=
500
mA
V
CE
=
5
V, I
C
=
1
A
I
C
=
500
mA, I
B
=
50
mA
I
C
=
500
mA, I
B
=
50
mA
V
CE
=
10
V, I
C
=
50
mA, f=200MHz
V
CB
=
10
V, I
E
=0, f=
1
MHz
h
FE(2)
V
CE(sat)
V
BE(sat)
V
V
MHz
pF
f
T
C
ob
Range
Marking
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