RoHS
2SD669A
2SD669A
FEATURES
Power dissipation
P
CM:
TRANSISTOR (NPN)
TO-126C
1
W (Tamb=25℃)
1. EMITTER
2. COLLECTOR
3. BASE
Collector current
I
CM:
1.5
A
Collector-base voltage
V
(BR)CBO
:
180
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
B
60-120
C
100-200
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
1
mA, I
E
=0
N
C
I
C
MIN
123
O
TYP
L
,
.
MAX
D
T
UNIT
V
V
V
180
160
5
10
10
60
30
1
1.5
140
14
200
Ic=
10
mA, I
B
=0
I
E
=
1
mA, I
C
=0
V
CB
=
160
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
5
V, I
C
=
150
mA
V
CE
=
5
V, I
C
=
500
mA
µA
µA
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE
I
C
=
500
mA, I
B
=
50
mA
V
CE
=
5
V, I
C
=
150
mA
V
CE
=
5
V, I
C
=
150
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
V
MHz
pF
f
T
C
ob
Range
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