RoHS
2SD2118
2SD2118
FEATURES
Power dissipation
P
CM
:
TO-252-2
TRANSISTOR (NPN)
À
9. 70¡ 0. 20
À
0. 75¡ 0. 10
6. 50¡ À. 15
0
5. 30¡ À. 10
0
0. 51¡ À. 05
0
2. 30¡ À. 10
0
5¡ ã
1. 20
0. 51¡ À. 10
0
0¡ « . 10
0
5¡ ã
1. BASE
2. 30¡ À. 10
0
0. 60¡ À. 10
0
À
1. 60¡ 0. 15
2. 30¡ À. 10
0
0. 51
2. COLLECTOR
1
W (Tamb=25℃)
3. EMITTER
Collector current
I
CM:
5
A
Collector-base voltage
V
(BR)CBO
:
50
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE(1)
W
Rank
Range
Marking
J
E
E
C
E
L
I
EBO
R
T
Q
O
Test
conditions
Ic=
50
µA, I
E
=0
Ic=
1
mA, I
B
=0
N
C
I
C
MIN
O
TYP
À
2. 70¡ 0. 20
0¡ ¡ ã9 ¡ ã
«
0. 6
0. 80¡ À. 10
0
L
,
.
5¡ ã
D
T
À
5. 50¡ 0. 10
MAX
UNIT
V
V
V
50
20
6
0.5
0.5
120
390
1
150
30
I
E
=
50
µA, I
C
=0
V
CB
=
40
V, I
E
=0
V
EB
=
5
V, I
C
=0
V
CE
=
2
V, I
C
=
500
mA
I
C
=
4
A, I
B
=
100
mA
µA
µA
h
FE(1)
V
CE(sat)
V
MHz
pF
f
T
V
CE
=
6
V, I
C
=
50
mA, f=
100
MHz
V
CB
=
20
V, I
E
=0, f=
1
MHz
C
ob
R
180-390
120-270
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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