RoHS
2SD1898
2SD1898
FEATURES
High V
CEO
High I
C
TRANSISTOR (NPN)
SOT-89
1.
BASE
2.
COLLECTOR
1
3.
EMITTER
2
3
Good h
FE
linearity
Low V
CE
(sat)
MAXIMUM RATINGS
(T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
100
80
5
1
500
150
-55-150
Units
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Test
I
C
=50μA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=50μA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=4V, I
C
=0
V
CE
=3V, I
C
=0.5A
I
C
=500mA, I
B
=20mA
V
CE
=10V, I
C
=50mA, f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
100
20
82
conditions
MIN
100
80
5
1
1
390
0.4
V
MHz
pF
TYP
MAX
UNIT
V
V
V
μA
μA
CLASSIFICATION OF
Rank
Range
Marking
h
FE
P
82-180
Q
120-270
DF
R
180-390
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