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2SC945LT1 参数 Datasheet PDF下载

2SC945LT1图片预览
型号: 2SC945LT1
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延硅晶体管 [NPN EPITAXIAL SILICON TRANSISTOR]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 68 K
品牌: WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
   
RoHS
2SC945LT1
NPN EPITAXIAL SILICON TRANSISTOR
*
*
*
*
Collector Current: Ic= 150mA
Collector-Emitter Voltage:Vce= 50V
High Total Power Dissipation:Pc=225mW
High Hfe And Good Linearity
1.
2.4
1.3
ABSOLUTE MAXIMUM RATINGS at Ta=25
0.95
2.9
1.9
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Vcbo
Vceo
Ic
P
D
Tj
Tstg
60
50
150
225
150
-55-150
V
V
mA
mW
0.95
0.4
Characteristic
Symbol
Rating
Unit
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Breakdown
Collector-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain-Bandwidth Product
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
300uS,Duty cycle
2%
W
J
E
DEVICE MARKING:
2SC945LT1=HF
E
C
E
L
R
T
Symbol
BVcbo
BVceo
Icbo
Hfe
Vce(sat)
Cob
f
T
Min
60
50
O
Typ
N
0.3
3.5
C
I
Unit
V
V
nA
V
PF
MHz
C
Ic= 1mA
O
Ib=0
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
Unit:mm
Max
Test Conditions
Ic=100uA Ie=0
100
700
Vcb= 60V Ie=0
Vce= 6V Ic= 1mA
Ic= 100mA Ib= 10mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
70
2.2
150
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com