RoHS
2SC4548
2SC4548
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
SOT-89
1.
BASE
2.
COLLECTOR
1
500
mW (Tamb=25℃)
3.
EMITTER
Collector current
I
CM
:
200
mA
Collector-base voltage
V
(BR)CBO
:
400
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-ON Time
W
Turn-OFF Time
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
10
µA, I
E
=0
Ic=
1
mA, I
B
=0
N
C
I
C
MIN
O
3
TYP
2
L
,
.
MAX
D
T
UNIT
V
V
V
400
400
5
0.1
0.1
60
200
0.6
1
70
4
0.25
5
I
E
=
10
µA, I
C
=0
V
CB
=
300
V, I
E
=0
V
EB
=
4
V, I
C
=0
V
CE
=
10
V, I
C
=
50
mA
I
C
=
50
mA, I
B
=
5
mA
I
C
=
50
mA, I
B
=
5
mA
V
CE
=
30
V, I
C
=
10
mA
µA
µA
h
FE(1)
V
CE(sat)
V
BE(sat)
V
V
MHz
pF
µs
µs
f
T
C
ob
t
on
t
off
V
CB
=
30
V, I
E
=0, f=
1
MHz
V
CC
=
150
V, I
c
=
50
mA,
I
B1
=-I
B2
=5
mA
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
D
60-120
CN
E
100-200
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Http:// www.wej.cn
E-mail:wej@yongerjia.com
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