RoHS
2SC2884
2SC2884
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (NPN)
SOT-89
1.
BASE
2.
COLLECTOR
1
0.5
W (Tamb=25℃)
3.
EMITTER
Collector current
I
CM
:
0.8
A
Collector-base voltage
V
(BR)CBO
:
35
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
W
CLASSIFICATION OF h
FE(1)
Rank
O
100-200
PO1
Y
160-320
PY1
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
1
mA, I
E
=0
N
C
I
C
MIN
O
3
TYP
2
L
,
.
MAX
D
T
UNIT
V
V
V
35
30
5
0.1
0.1
100
35
0.5
0.5
Ic=
10
mA, I
B
=0
I
E
=
1m
A, I
C
=0
V
CB
=
35
V, I
E
=0
V
EB
=
5
V, I
C
=0
V
CE
=
1
V, I
C
=
100
mA
V
CE
=
1
V, I
C
=
700
mA
µA
µA
h
FE(1)
320
h
FE(2)
V
CE(sat)
V
BE
I
C
=
500
mA, I
B
=
20
mA
V
CE
=
1
V, I
C
=
10
mA
V
CE
=
5
V, I
C
=
10
mA
V
CB
=
10
V, I
E
=0, f=
1
MHz
V
V
MHz
pF
0.8
120
13
f
T
C
ob
Range
Marking
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E-mail:wej@yongerjia.com
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