RoHS
2SC2786
NPN EPITAXIAL SILICON TRANSISTOR
PRE-AMPLIFIER,LOW LEVEL&LOW NOISE
*
Complement to S9015LT1
*
Collector Current: Ic= 100mA
*
Collector-Emitter Voltage:Vce= 45V
*
High Total Power Dissipation:Pc=225mW
*
High Hfe And Good Linearity
1.
ABSOLUTE MAXIMUM RATINGS at Ta=25
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Symbol
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
Rating
50
45
5
100
225
150
-55-150
Unit
2.9
1.9
0.95 0.95
V
V
V
mA
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
W
J
E
*
#
Base-Emitter on Voltage
Output Capacitance
Current Gain-Bandwidth Product
Noise Figure
E
C
E
L
Breakdown
R
T
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce(sat)
Vbe(sat)
Vbe(on)
Cob
f
T
NF
Min
50
45
O
Typ
N
50
50
0.3
mW
C
I
Unit
V
V
V
nA
nA
C
Ic= 1mA
2.4
1.3
O
0.4
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
U nit:m m
Max
Test Conditions
Ic=100uA Ie=0
Ib=0
5
Ie= 100uA Ic=0
Vcb= 50V Ie=0
Veb= 5V Ic= 0
Vce= 5V Ic= 1mA
60
300
1000
V
V
V
PF
MHz
10
dB
Ic= 100mA Ib= 5mA
Ic= 100mA Ib= 5mA
Vce= 5V Ic= 2mA
Vcb= 10V Ie=0 f=1MHz
Vce= 5V Ic= 10mA
Vce= 5V Ic= 0.2mA
f=1KHz Rs=2Kohm
1.00
0.58
0.63
2.2
150
270
o.7
3.5
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test : Pulse Width
300uS,Duty cycle
2%
DEVICE MARKING: 2SC2786=L6,F1X
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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