RoHS
2SC2412K
NPN EPITAXIAL SILICON TRANSISTOR
GENERAL PURPOSE TRANSISTOR
*
Feature:
Cob=2.0pF
(2) Complements the 2SA1037AK/2SA1576/
1.
(1) Low Cob.
2SA1774/2SA1774H/2SA2029/2SA933AS.
2.4
1.3
ABSOLUTE MAXIMUM RATINGS at Ta=25
2.9
1.9
0.95 0.95
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current
Collector Dissipation Ta=25 *
Junction Temperature
Storage Temperature
Vceo
Vcbo
Ic
P
D
Tj
Tstg
50
60
0.15
200
150
-55-150
V
V
A
mW
0.4
Characteristic
Symbol
Rating
Unit
ELECTRICAL CHARACTERISTICS at Ta=25
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter
Voltage#
Breakdown
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
W
J
E
*
#
Current Gain-Bandwidth Product
E
C
E
L
R
T
Symbol
BVcbo
BVceo
BVebo
Icbo
Iebo
Hfe
Vce(sat)
Cob
f
T
Min
60
50
O
2
Typ
N
0.1
0.1
0.4
3.5
C
I
Unit
V
V
V
uA
uA
C
Ic= 50uA
Ic= 1mA
Ie= 50uA
Vcb= 60V
Veb=7V
O
1.BASE
2.EMITTER
3.COLLECTOR
L
,
.
D
T
Unit:mm
Max
Test Conditions
7
120
560
V
PF
MHz
Vce= 6V Ic= 1mA
Ic= 50mA Ib= 5mA
Vcb= 12V Ie=0 f=1MHz
Vce= 12V Ie= -2mA
f=100MHZ
180
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25 .
Pulse Test: Pulse Width
300uS,Duty cycle
2%
DEVICE MARKING:
2SC2412K=HF
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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