RoHS
2SC2383
2SC2383
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92MOD
1. EMITTER
2. COLLECTOR
0.9
W (Tamb=25℃)
3. BASE
Collector current
1
A
I
CM:
Collector-base voltage
V
(BR)CBO
:
160
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
unless otherwise specified)
Test
conditions
MIN
160
160
6
1
10
1
60
320
1
0.75
20
V
V
MHz
MAX
UNIT
V
V
V
µA
µA
µA
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CER
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
W
CLASSIFICATION OF h
FE
Rank
R
60-120
O
100-200
Y
160-320
J
E
Range
E
C
E
L
R
T
f
T
O
N
C
I
C
O
L
,
.
D
T
Ic= 100µA , I
E
=0
I
C
= 10 mA , I
B
=0
I
E
= 10µA, I
C
=0
V
CB
=150 V , I
E
=0
V
CB
=150 V , R
EB
= 10MΩ
V
EB
=6V, IC=0
V
CE
=5 V, IC= 200mA
I
C
= 500m A, I
B
= 50mA
I
C
= 5 mA, VCE= 5V
V
CE
= 5 V, I
C
= 200mA
I
EBO
h
FE
V
CE(sat)
V
BE
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