RoHS
2SC2060
2SC2060
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92MOD
1. EMITTER
2. COLLECTOR
0.75
W (Tamb=25℃)
3. BASE
Collector current
1
A
I
CM
:
Collector-base voltage
V
(BR)CBO
:
40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Symbol
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
W
J
E
E
C
E
L
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
R
T
unless otherwise specified)
Test
conditions
MIN
40
32
5
0.5
0.1
80
400
0.4
V
MAX
UNIT
V
V
V
µA
µA
O
N
C
I
C
123
O
L
,
.
D
T
Ic= 100µA , I
E
=0
I
C
= 1mA , I
B
=0
I
E
= 100µA, I
C
=0
V
CB
=40V , I
E
=0
V
EB
=4V ,
I
C
=0
h
FE(1)
V
CE
=3V, I
C
= 100mA
I
C
= 500m A, I
B
= 50mA
V
CE(sat)
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