RoHS
2SC1627A
2SC1627A
FEATURE
Power dissipation
P
CM
:
TRANSISTOR (NPN)
TO-92MOD
1. EMITTER
2. COLLECTOR
0.8 W (Tamb=25℃)
3. BASE
Collector current
0.4 A
I
CM:
Collector-base voltage
V
(BR)CBO
:
80 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
unless otherwise specified)
Test
conditions
MIN
80
80
5
0.1
0.1
70
40
0.4
0.55
80
0.8
V
V
MHz
240
MAX
UNIT
V
V
V
µA
µA
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
W
CLASSIFICATION OF hFE
(1)
Rank
Range
O
70-140
Y
120-240
J
E
E
C
E
L
R
T
f
T
O
N
C
I
C
O
L
,
.
D
T
Ic= 100µA , I
E
=0
I
C
=5mA, IB=0
I
E
= 100µA, I
C
=0
V
CB
=50V, IE=0
V
EB
=5V, IC=0
V
CE
=2 V, IC= 50mA
h
FE(1)
h
FE(2)
V
CE
=2 V, IC= 200mA
I
C
= 200m A, I
B
= 20mA
V
CE
= 2V, IC= 5mA
V
CE
= 10 V, I
C
= 10mA
V
CE(sat)
V
BE(on)
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