RoHS
2SA966
2SA966
FEATURE
Power dissipation
P
CM
: 0.9
TRANSISTOR (PNP)
TO-92MOD
1. EMITTER
2. COLLECTOR
W(Tamb=25℃)
3. BASE
Collector current
I
CM
: -1.5
A
Collector-base voltage
V
(BR)CBO
: -30
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
unless otherwise specified)
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
Collector-emitter saturation voltage
Base-emitter voltage
W
Transition frequency
CLASSIFICATION OF h
FE(1)
Rank
Range
O
100-200
Y
160-320
J
E
E
C
E
L
R
T
O
Test
N
C
I
C
123
MIN
-30
-30
-5
O
L
,
.
D
T
conditions
MAX
UNIT
V
V
V
Ic= -1mA , I
E
=0
I
C
= -10 mA , I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -30 V , I
E
=0
V
EB
= -5V ,
I
C
=0
100
-0.1
-0.1
320
-2
-1
100
µA
µA
I
EBO
h
FE(1)
V
CE
=-2 V, I
C
= -500mA
I
C
= -1.5 A, I
B
= -0.03A
I
C
= -500 mA, V
CE
= -2V
V
CE
= -2 V, I
C
= -500mA
V
CE(sat)
V
BE
V
V
MHz
f
T
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