RoHS
2SA950
2SA950
FEATURE
Power dissipation
TRANSISTOR (PNP)
TO-92
1. EMITTER
P
CM
: 0.6 W (Tamb=25℃)
Collector current
I
CM :
-0.8
A
Collector-base voltage
V
(BR)CBO
: -35 V
Operating and storage junction temperature range
T
j
, T
stg
:
-55℃ to +150℃
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
unless otherwise specified)
Test
conditions
MIN
-35
-30
-5
-0.1
-0.1
100
35
-0.7
V
320
TYP
MAX
UNIT
V
V
V
µA
µA
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
EBO
DC current gain
Collector-emitter saturation voltage
W
Collector Output Capacitance
Transition frequency
J
E
E
C
E
L
O
100-200
R
T
Ic= -1mA , I
E
=0
O
N
C
I
C
O
1 2 3
L
,
.
D
T
I
C
= -10 mA , I
B
=0
I
E
= -1Ma, I
C
=0
V
CB
= -35V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
=-1V, I
C
=-100mA
V
CE
=-1V, I
C
= -700mA
I
C
= -500mA, I
B
= -20mA
V
CB
=-10V, I
E
=0
f=1MH
Z
V
CE
=-5V, I
C
=-10mA,
h
FE(1)
h
FE(2)
V
CE(sat)
Cob
19
pF
f
T
120
MHz
CLASSIFICATION OF h
FE(1)
Rank
Range
Y
160-320
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