RoHS
2SA608
2SA608
FEATURES
Power dissipation
P
CM
:
TRANSISTOR (PNP)
TO-92
1. EMITTER
2. COLLECTOR
400
mW (Tamb=25℃)
3. BASE
Collector current
I
CM
:
-100 mA
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Test
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF h
FE
W
Rank
Range
J
E
E
C
E
L
D
60-120
R
T
I
EBO
h
FE
f
T
Cob
O
conditions
Ic=-100µA, I
E
=0
Ic=-1mA, I
B
=0
N
C
I
C
MIN
-40
-30
-5
O
TYP
1 2 3
L
,
.
MAX
D
T
UNIT
V
V
V
-1
-1
µA
µA
I
E
=-100µA, I
C
=0
V
CB
=-25V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-6V, I
C
=-1mA
I
C
=-50mA, I
B
=-5mA
V
CE
=-6V, I
C
=-10mA
V
CB
=-6V, f=1MHz
60
560
-0.5
180
7
V
MHz
pF
V
CE
(sat)
E
100-200
F
160-320
G
280-560
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
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