RoHS
2SA608N
2SA608N
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
TO-92
1.
EMITTER
: 0.5
W (Tamb=25℃)
2.
COLLECTOR
Collector current
I
CM
: -0.15
A
Collector-base voltage
V
(BR)CBO
: -60
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3.
BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
Collector output capacitance
J
E
E
C
E
L
I
EBO
R
T
O
Test
conditions
Ic=
-10
µA,
I
E
=0
Ic=
-1
mA, I
B
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
1 2 3
UNIT
V
V
V
-60
-50
-6
-0.1
-0.1
160
70
-0.3
-1
200
3
560
I
E
=
-10
µA,
I
C
=0
V
CB
=
-40
V, I
E
=0
V
EB
=
-5
V, I
C
=0
V
CE
=
-6
V, I
C
=
-1
mA
µA
µA
h
FE(1)
h
FE(2)
V
CE
=
-6
V, I
C
=
-0.1
mA
I
C
=
-100
mA, I
B
=
-10
mA
I
C
=
-100
mA, I
B
=
-10
mA
V
CE
=
-6
V, I
C
=-10mA
V
CB
=
-6
V, I
E
=0, f=
1
MHz
V
CE(sat)
V
BE(sat)
V
V
MHz
pF
f
T
C
ob
CLASSIFICATION OF h
FE(1)
Rank
F
160-320
G
280-560
Range
Marking
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