RoHS
2SA1700
2SA1700
FEATURES
Power dissipation
P
CM
TRANSISTOR (NPN)
TO-251
1. BASE
: 1
W (Tamb=25℃)
2. COLLECTOR
3. EMITTER
Collector current
I
CM
: -200
mA
Collector-base voltage
V
(BR)CBO
: -400
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
CLASSIFICATION OF h
FE(1)
Rank
D
60-120
E
100-200
Range
J
E
E
C
E
L
R
T
O
Test
conditions
Ic=-
10
µA,
I
E
=0
Ic=-
1
mA, I
B
=0
N
C
I
C
1
MIN
O
2
3
TYP
L
,
.
MAX
D
T
UNIT
V
V
V
-400
-400
-5
-0.1
-0.1
60
200
-0.6
-1
70
I
E
=-
10
µA,
I
C
=0
V
CB
=-
300
V, I
E
=0
V
EB
=-
4
V, I
C
=0
µA
µA
I
EBO
h
FE(1)
V
CE
=-
10
V, I
C
=-
50
mA
I
C
=-
50
mA, I
B
=-
5
mA
I
C
=-
50
mA, I
B
=-
5
mA
V
CE
=-
30
V, I
C
=-
10
mA
V
CE(sat)
V
BE(sat)
V
V
MHz
f
T
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
