RoHS
2SA1296
2SA1296
FEATURES
Power dissipation
P
CM
TRANSISTOR (PNP)
TO-92
1.
EMITTER
: 0.75
W (Tamb=25℃)
2.
COLLECTOR
Collector current
I
CM
: -2
A
Collector-base voltage
V
(BR)CBO
: -20
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
3.
BASE
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Test
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
W
Collector output capacitance
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Y
120-240
GR
200-400
J
E
E
C
E
L
I
EBO
R
T
O
conditions
Ic=
-0.1
mA, I
E
=0
Ic=
-10
mA, I
B
=0
N
C
I
C
MIN
O
TYP
L
,
.
MAX
D
T
1 2 3
UNIT
V
V
V
-20
-20
-6
-0.1
-0.1
120
40
-0.5
-0.85
120
40
400
I
E
=
-0.1m
A, I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-6
V, I
C
=0
µA
µA
h
FE(1)
V
CE
=
-2
V, I
C
=
-0.1
A
V
CE
=
-2
V, I
C
=
-2
A
I
C
=
-2
A, I
B
=
-0.1
A
V
CE
=
-2
V, I
C
=
-0.1
A
V
CE
=
-2
V, I
C
=
-0.5
A
V
CB
=
-10
V, I
E
=0,f=
1
MHz
h
FE(2)
V
CE(sat)
V
BE
V
V
MHz
pF
f
T
C
ob
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