RoHS
2SA1213
2SA1213
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 0.5
Collector current
I
CM
: -2
Collector-base voltage
V
(BR)CBO
: -50
SOT-89
W (Tamb=25℃)
A
V
1. BASE
1
2. COLLECTOR
2
3. EMITTER
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
unless otherwise specified)
Test
conditions
Symbol
V
(BR)CBO
V
(BR)CEO
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
W
CLASSIFICATION OF h
FE
Rank
Range
J
E
E
C
E
L
NO,NY
R
T
I
CBO
I
EBO
h
FE 1
h
FE 2
V
CEsat
V
BEsat
V
(BR)EBO
O
N
Ic=-100µA , I
E
=0
I
C
= -10mA , I
B
=0
I
E
=-100µA, I
C
=0
C
I
C
O
3
-50
-50
-5
L
,
.
MAX
V
V
V
-0.1
-0.1
D
T
MIN
UNIT
V
CB
=-50 V , I
E
=0
V
EB
=-5 V ,
I
C
=0
70
20
µA
µA
V
CE
=-2V, I
C
= -0.5A
V
CE
=-2V, I
C
= -2A
I
C
=-1A, I
B
= -0.05A
I
C
=-1A, I
B
= -0.05A
240
-0.5
-1.2
V
V
f
T
V
CE
= -2V, I
C
=-0.5A
100
MHz
O
70-140
Y
120-240
Marking
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