RoHS
2SA1160
2SA1160
FEATURE
Power dissipation
TRANSISTOR (PNP)
TO-92MOD
1. EMITTER
2. COLLECTOR
3. BASE
P
CM
: 0.9 W (Tamb=25℃)
Collector current
I
CM:
-2A
Collector-base voltage
V
(BR)CBO
: -20 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
unless otherwise specified)
Test
conditions
MIN
-20
-10
-6
-0.1
-0.1
140
60
-0.2
140
50
-0.5
V
MHz
pF
600
TYP
MAX
UNIT
V
V
V
µA
µA
DC current gain
Collector-emitter saturation voltage
W
Transition frequency
Output capacitance
J
E
E
C
E
L
A
140-280
R
T
Ic= -1mA , I
E
=0
O
N
C
I
C
123
O
L
,
.
D
T
I
C
=-10mA , I
B
=0
I
E
= -1mA, I
C
=0
V
CB
= -20 V, I
E
=0
V
EB
= -6 V, I
C
=0
V
CE
=-1V, I
C
= -0.5A
V
CE
=-1V, I
C
= -4A
I
C
= -2A, I
B
=-50mA
V
CE
=-1V, I
C
= -0.5A
V
CE
=-10V, I
E
=0,f=1 MHz
h
FE(1)
h
FE(2)
V
CE(sat)
f
T
C
ob
CLASSIFICATION OF h
FE
Rank
Range
B
200-400
C
300-600
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