2N7002
MOSFET (N-Channel)
FEATURES
High density cell design for low R
DS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
Marking: 7002
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
DS
I
D
P
D
R
ӨJA
T
J
T
stg
Parameter
Drain-Source voltage
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Value
60
115
225
Thermal Resistance, junction to Ambient
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
CT
R
ON
I
mA
mW
℃
556
℃/W
℃
150
-55-150
Symbol
V
(BR)DSS
V
th(GS)
l
GSS
Test
conditions
V
GS
=0 V, I
D
=10
μA
V
DS
=V
GS
, I
D
=250
μA
V
DS
=0 V, V
GS
=±25 V
V
DS
=60 V, V
GS
=0 V
V
GS
=10 V, V
DS
=7 V
I
DSS
I
D(ON)
r
DS(0n)
g
fs
V
DS(on)
V
SD
C
iss
C
OSS
C
rSS
t
d(on)
t
d(off)
V
DS
=25V, V
GS
=0V, f=1MHz
V
GS
=10 V, I
D
=500mA
V
GS
=5 V, I
D
=50mA
V
DS
=10 V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
GS
=5V, I
D
=50mA
I
S
=115mA, V
GS
=0 V
V
DD
=25 V, R
L
=50Ω
I
D
=500mA,V
GEN
=10 V
R
G
=25
Ω
C
Units
V
MIN
60
1
2.5
±80
80
500
1
1
80
0.5
0.05
0.55
7.5
7.5
500
3.75
0.375
1.2
50
25
5
pF
TYP
MAX
UNIT
V
nA
nA
mA
Ω
ms
V
V
V
20
40
ns
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
On-state Drain Current
Drain-Source On-Resistance
Forward Trans conductance
Drain-source on-voltage
Diode Forward Voltage
Input Capacitance
W
EJ
Output Capacitance
Reverse Transfer Capacitance
SWITCHING TIME
Turn-on Time
Turn-off Time
WEJ ELECTRONIC CO.
EL
E
Http:// www.wej.cn
CO
.,L
T
SOT-23
1. GATE
2. SOURCE
3. DRAIN
E-mail:wej@yongerjia.com
D.
2N7002
RoHS
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
