RoHS
2N5551
2N5551
FEATURES
Power dissipation
TRANSISTOR (NPN)
TO-92
P
CM
: 0.625
W (Tamb=25℃)
1. EMITTER
Collector current
I
CM
: 0.6
A
Collector-base voltage
V
(BR)CBO
: 180 V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
unless otherwise specified)
Test
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
W
Transition frequency
CLASSIFICATION OF h
FE(2)
Rank
Range
A
80-160
B
120-180
C
150-250
J
E
E
C
E
L
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CEsat
V
BEsat
R
T
Ic= 100
µ
A, I
E
=0
Ic= 100
µ
A, I
B
=0
I
E
= 100
µ
A, I
C
=0
O
conditions
N
C
I
C
6
1 2 3
O
L
,
.
V
V
V
D
T
MIN
180
160
TYP
MAX
UNIT
V
CB
= 180 V, I
E
=0
V
EB
= 4 V, I
C
=0
0.1
0.1
80
80
50
0.5
1
80
250
µ
A
µ
A
V
CE
= 5 V, I
C
= 1 mA
V
CE
= 5 V, I
C
= 10 mA
V
CE
= 5 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 50 mA, I
B
= 5 mA
V
CE
= 5 V,I
C
= 10 mA,
f =
30MHz
V
V
MHz
f
T
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