RoHS
2N3906
FEATURE
Power dissipation
P
CM
: 0.625 W (Tamb=25℃)
Collector current
I
CM
: -0.2
A
Collector-base voltage
V
(BR)CBO
: -40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
TO-92
2N3906
TRANSISTOR (PNP)
1.EMITTER
2.BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
Test
conditions
Ic= -100µA , I
E
=0
I
C
= -1 mA , I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -40 V , I
E
=0
V
CE
= -40 V , I
B
=0
V
EB
= -5 V ,
I
C
=0
h
FE(1)
h
FE(2)
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Output capacitance
Input Capacitance
Noise figure
W
Transition frequency
Delay Time
Rise Time
Fall Time
J
E
E
C
E
L
O
100-200
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)
R
T
V
CE
=-1 V, I
C
=-0.1mA
V
CE
=-1 V, I
C
= -1mA
V
CE
=-1 V, I
C
= -10mA
V
CE
=-1 V, I
C
= -50mA
O
N
C
I
MIN
-40
C
O
1 2 3
L
,
.
V
V
V
µA
µA
µA
D
T
TYP
MAX
UNIT
-40
-5
-0.1
-0.1
-0.1
60
80
100
60
30
300
V
CE
=-1 V, I
C
= -100mA
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
I
C
= -10 mA, I
B
= -1 mA
I
C
= -50 mA, I
B
= -5 mA
-0.25
-0.4
-0.65
-0.85
-0.95
4.5
10
4
V
V
V
V
pF
pF
dB
V
BE(sat)
Cobo
Cibo
NF
V
CB
=-5V,I
E
=0,f=100KHz
V
EB
=-0.5V,I
E
=0,f=100KHz
V
CE
=-
5
V,I
c
=-
100
µA,
f=
1
KHz,RS=
1
KΩ
V
CE
= -20 V, I
C
= -10mA
f
T
td
tr
ts
tf
f =
100MHz
Vcc=-3V,V
BE
=-0.5V,
Ic=-10mA,I
B1
=-1mA
Vcc=-3V, Ic=-10mA
I
B1
=I
B2
=-1mA
250
35
35
225
75
MHz
ns
ns
ns
ns
Storage Time
CLASSIFICATION OF h
FE(3)
Rank
Range
Y
200-300
G
300-400
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Http:// www.wej.cn
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