RoHS
1SS265
Band switching diode
Features
1. Low differential forward resistance
2. Low diode capacitance
3. High reverse impedance
Applications
Band switching in VHF-tuners
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
DC Reverse voltage
Power dissipation
Junction temperature
Average rectified current
Storage temperature range
Maximum Thermal Resistance
T
j
=25℃
Junction ambient
W
J
E
Parameter
E
C
E
L
R
T
Test Conditions
O
N
C
I
Symbol
V
R
I
O
P
d
T
j
T
stg
C
O
L
,
.
D
T
Value
35
100
150
150
-55…+150
Unit
V
mA
MW
℃
℃
Test Conditions
I=4mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
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