RoHS
ISS245
High-voltage switching diode
Features
1. Small surface mounting type
2. High reliability
3. V
RM
=250V
Applications
High voltage switch and general purpose rectification
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Surge current
Mean rectifying current
Peak forward current
Power dissipation
Junction temperature
Storage temperature range
W
Maximum Thermal Resistance
T
j
=25℃
Parameter
Test Conditions
on PC board 50mm×50mm×1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
J
E
E
C
E
L
t
p
=1s
Test Conditions
R
T
O
N
C
I
Symbol
V
RM
V
R
I
Surge
I
O
I
FM
P
T
j
T
stg
C
O
L
,
.
D
T
Type
Value
250
220
1
200
625
300
175
-65~+175
Unit
V
V
A
mA
mA
mW
℃
℃
Junction ambient
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:wej@yongerjia.com
WINNERJOIN [ SHENZHEN YONGERJIA INDUSTRY CO.,LTD ]
