RoHS
1N914
Fast switching diode
Features
1. High reliability
2. High conductance
3. Fast switching speed (trr≤4 ns)
Applications
For general purpose switching applications
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
Tj=25℃
Parameter
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Test Conditions
Symbol
VRM
Value
100
75
Unit
V
VRRM
VRWM
VR
V
75
V
75
V
RMS reverse voltage
VR(RMS)
IF
53
V
Forward current
300
200
mA
mA
Average rectified current
Half wave rectification with
resistive load and f>50MHz
IFAV
Non repetitive peak forward surge t=1s
IFSM
IFSM
Pd
1
4
A
A
current
t=1µs
Power dissipation
Storage temperature range
I=4mm TL=25℃
500
mW
Tstg
-65~+175
℃
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