W27C512
DC Programming Characteristics, continued
PARAMETER
SYM.
CONDITIONS
LIMITS
UNIT
MAX.
MIN.
-0.3
2.4
TYP.
IL
V
Input Low Voltage
Input High Voltage
Output Low Voltage (Verify)
Output High Voltage (Verify)
A9 Silicon I.D. Voltage
PP
-
-
-
0.8
5.5
V
V
V
V
V
V
V
IH
V
-
OL
V
OL
I
= 2.1 mA
-
-
0.45
-
OH
V
OH
I
= -0.4 mA
2.4
-
ID
V
-
-
-
11.5
11.75
4.75
12.0
12.0
5.0
12.5
12.25
5.25
PP
CP
V
V
V
Program Voltage
V
CC
Supply Voltage (Program)
AC PROGRAMMING/ERASE CHARACTERISTICS
(VCC = 5.0V 5%, TA = 25 C 5 C)
±
°
± °
PARAMETER
SYM.
LIMITS
UNIT
MIN. TYP. MAX.
PRT
T
50
-
-
nS
PP
OE /V Pulse Rise Time
DS
Data Setup Time
T
2.0
95
-
-
m
S
PWP
T
100
105
m
S
CE
Program Pulse Width
PWE
T
95
100
105
mS
CE Erase Pulse Width
Data Hold Time
DH
T
2.0
2.0
-
-
-
-
mS
OES
T
m
S
PP
OE /V Setup Time
OEH
T
2.0
25
-
-
-
m
S
PP
OE /V Hold Time
DV1
T
1
mS
Data Valid from CE
DV2
Data Valid from Address Change
T
25
0
-
-
1
m
S
DFP
T
130
nS
CE High to Output High Z
Address Setup Time
Address Hold Time
AS
T
2.0
0
-
-
-
-
-
-
m
S
AH
T
m
S
AHC
T
2.0
m
S
CE
Address Hold Time after
High (Erase)
VS
T
2.0
2.0
-
-
-
-
m
S
PP
OE /V Valid after CE High
VR
T
m
S
PP
OE /V Recovery Time
CC
ACV
Address Access Time During Erase Verify (V = 3.75V)
T
-
-
-
-
250
150
nS
nS
OEV
Output Enable Access Time during Erase Verify
T
CC
(V = 3.75V)
CC
PP
PP
Note: V must be applied simultaneously or before V and removed simultaneously or after V
.
Publication Release Date: November 1999
Revision A4
- 7 -
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