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W25Q20BWUXIG 参数 Datasheet PDF下载

W25Q20BWUXIG图片预览
型号: W25Q20BWUXIG
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 1.8V 2M位串行闪存 [1.8V 2M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 70 页 / 2014 K
品牌: WINBOND [ WINBOND ]
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W25Q20BW  
8.2.28 Erase / Program Resume (7Ah)  
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase  
operation or the Page Program operation after an Erase/Program Suspend. The Resume instruction  
“7Ah” will be accepted by the device only if the SUS bit in the Status Register equals to 1 and the BUSY  
bit equals to 0. After issued the SUS bit will be cleared from 1 to 0 immediately, the BUSY bit will be set  
from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will  
complete the program operation. If the SUS bit equals to 0 or the BUSY bit equals to 1, the Resume  
instruction “7Ah” will be ignored by the device. The Erase/Program Resume instruction sequence is  
shown in figure 26.  
Resume instruction is ignored if the previous Erase/Program Suspend operation was interrupted by  
unexpected power off. It is also required that a subsequent Erase/Program Suspend instruction not to be  
issued within a minimum of time of “tSUS” following a previous Resume instruction.  
Figure 26. Erase/Program Resume Instruction Sequence  
Publication Release Date: January 25, 2011  
- 45 -  
Preliminary - Revision B