W25Q20BW
9.7 AC Electrical Characteristics (cont’d)
SPEC
DESCRIPTION
SYMBOL
ALT
UNIT
MIN
TYP
MAX
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
tCHHH
tHHCH
tCHHL
5
5
5
ns
ns
ns
ns
ns
ns
ns
µs
µs
(2)
tHHQX
tLZ
7
(2)
/HOLD to Output High-Z
tHLQZ
tHZ
12
(3)
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
tWHSL
20
(3)
tSHWL
100
(2)
tDP
3
(2)
/CS High to Standby Mode without Electronic
Signature Read
tRES1
30
(2)
/CS High to Standby Mode with Electronic Signature
Read
tRES2
30
µs
(2)
/CS High to next Instruction after Suspend
Write Status Register Time
tSUS
20
15
µs
ms
µs
µs
ms
ms
ms
ms
s
tW
10
20
(4)
Byte Program Time (First Byte)
tBP1
tBP2
tPP
tSE
50
(4)
Additional Byte Program Time (After First Byte)
2.5
0.4
30
10
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
0.8
(5)
200/400
800
1,000
4
tBE
120
150
1
1
tBE
2
tCE
Notes:
1. Clock high + Clock low must be less than or equal to 1/fC.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Only applicable as a constraint for a Write Status Register instruction when SRP0 bit is set to 1.
4. For multiple bytes after first byte within a page, tBPN = tBP1 + tBP2 * N (typical) and tBPN = tBP1 + tBP2 * N (max), where N =
number of bytes programmed.
5. Max Value t
with <50K cycles is 200ms and >50K & <100K cycles is 400ms.
SE
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